珍しいボート形状のβ-GeSe-A六環半導体の高圧合成と特徴付け
Fabian O von Rohr1, Huiwen Ji1, F Alexandre Cevallos1
1Department of Chemistry and ‡Department of Physics, Princeton University , Princeton, New Jersey 08544, United States.
Journal of the American Chemical Society
|January 27, 2017
まとめ
研究者らは,ユニークな二次元特性を持つ新しい物質,β-ゲルマニウムセレニド (β-GeSe) を発見しました. この半導体は 将来のデバイスの用途に 期待できる電子特性を備えています
科学分野:
- 材料科学
- 凝縮物質物理学
- 固体化学
背景:
- 新しい電子機器には 二次元の材料が不可欠です
- ゲルマニウムセレニド (GeSe) は様々な形で存在し,その性質に影響を与えます.
- 黒リンは,注目すべき電子特性を有する関連材料です.
研究 の 目的:
- β-GeSeと表記された新しいGeSeの多形体の電子的および構造的性質を報告する.
- β-GeSeのユニークな結晶構造と二次元の特徴を調査する.
- β-GeSeと,その既知の親類であるα-GeSeと黒いリンを比較する.
主な方法:
- 高圧と高温でβ-GeSeを合成する
- 構造と電子特性の実験的特徴付け
- 電子構造を計算する
主要な成果:
- β-GeSeは,α-GeSeと黒いの"椅子の"形状とは異なり,その6つの環でユニークな"ボート"形状を示しています.
- β-GeSeは,約0.5 eVのバルクバンドギャップと約0.9 eVの単層バンドギャップを持つ半導体である.
- β-GeSe結晶の内平面抵抗性は約1 Ω·cmであり,最小の温度依存を示している.
結論:
- β-GeSeは安定した二次元材料で, 調節可能な電子特性を持っています.
- 電子特性はα-GeSeと黒の間のもので,デバイスの応用に大きな可能性を示しています.
- 独特の構造と半導体特性により,β-GeSeは将来の電子および光電子機器の有望な候補となる.
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