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Updated: May 11, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Published on: May 28, 2016

強烈に相互作用する Re ((0001) とその電子特性の h-BN フロンティアをパッチすることで生じる修復不可能な欠陥

Yue Qi1, Zhepeng Zhang1, Bing Deng1

  • 1Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China.

Journal of the American Chemical Society
|April 11, 2017
PubMed
まとめ

Re(0001) で育った六角性化物 (h-BN) の欠陥は,電子特性を変化させるドメインパッチから生じる. これらの欠陥を理解することで,欠陥工学を通して材料の特性を調整することができます.

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