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Updated: Mar 2, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

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ポリクリスタルフィルムにおける単粒子の欠陥のダイナミクスのブラッグ相関微分画像

Allison Yau1, Wonsuk Cha2,3, Matthew W Kanan1

  • 1Department of Chemistry Stanford University, Stanford, CA 94305, USA.

Science (New York, N.Y.)
|May 20, 2017
PubMed
まとめ

新しい技術である穀物ブラッグ相関 difrractive imaging (gBCDI) は,多結晶材料の個々の穀物ダイナミクスと欠陥を視覚化します. この方法は,動作条件下でストレスのフィールドと変位の詳細な観察を可能にします.

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A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
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Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
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