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Updated: May 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

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グラフェンプラズモニクスにおける量子非局所効果のチューニング

Mark B Lundeberg1, Yuanda Gao2, Reza Asgari3,4

  • 1ICFO-Institut de Cinècies Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels (Barcelona), Spain.

Science (New York, N.Y.)
|June 10, 2017
PubMed
まとめ

研究者は 電子系を研究するために グラフェンプラズモンを用いて ユニークな空間的非局所性を明らかにしました この方法は量子理論と正確に一致し 電子構造と物質の性質に関する新しい洞察を 提供しています

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Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons07:39

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

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関連する概念動画

π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
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