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Updated: Feb 26, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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単層MoS2におけるアルゴンプラズマ誘導相転換

Jianqi Zhu1,2, Zhichang Wang3, Hua Yu1,2

  • 1Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.

Journal of the American Chemical Society
|July 22, 2017
PubMed
まとめ

研究者はアルゴンプラズマを用いたモリブデン二硫化物 (MoS2) の相変化制御のための新しい方法を開発した. この技術はユニークなモザイク構造を作り,MoS2フィールド効果トランジスタ (FET) の性能を向上させます.

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