透明双極半導体の化学設計と例
Takeshi Arai1, Soshi Iimura1, Junghwan Kim2
1Laboratory for Materials and Structures, Tokyo Institute of Technology , Yokohama 226-8503, Japan.
Journal of the American Chemical Society
|November 9, 2017
まとめ
研究者は,初期の移行金属を用いた透明な双極半導体 (TBSC) の新しい設計コンセプトを開発しました. この突破は,次世代の透明な電子機器のための 広帯域の材料における キャリア制御の改善を可能にします
科学分野:
- 材料科学
- 固体物理学
- 光電子機器
背景:
- 透明バイポラー半導体 (TBSC) は,高度な透明な電子機器に不可欠です.
- バンドギャップの広い材料のバイポラリティの実現は,キャリアの制御能力が悪いため困難です.
- 現在,CuInO2とSnOだけがTBSCとして知られています.
研究 の 目的:
- 透明双極半導体 (TBSC) のための新しい設計コンセプトを提案する.
- 広帯域ギャップ材料のキャリア制御性と透明性の限界を克服する.
- 次世代の光電子機器のための新しいTBSC材料を特定する.
主な方法:
- キャリアドーピングの強化のための早期移行金属 (eTM) を含む設計戦略を提案した.
- 双極性ドーピングに適した最適のバンド構造のための化学結合の設計に焦点を当てた.
- 光学的な透明性を維持するために禁止されたバンドエッジのトランジションを使用した.
- 提案された基準に基づいて,候補材料としてテトラゴナルZrOSを調査した.
主要な成果:
- ZrOS (10^-7から10^-2 S cm^-1) で優れた電気伝導性を制御することが実証された.
- Yドーピングでp型導電性とF型導電性を達成した (約10^-2 S cm^-1).
- ZrOSの光学的に広い帯域のギャップが確認されました (10^-4 cm^-1以下 ~2.5 eVまで).
結論:
- 提案された設計コンセプトは,eTMイオン化合物に基づいた新しいTBSCを成功裏に生み出します.
- テトラゴナルZrOSは,設計原理を検証する実用的な例として機能します.
- この研究は,高度な透明な電子・光電子機器の開発に道を開く.
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