Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

Semiconductors01:22

Semiconductors

1.6K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.6K
Hybridization of Atomic Orbitals I03:24

Hybridization of Atomic Orbitals I

68.1K
The mathematical expression known as the wave function, ψ, contains information about each orbital and the wavelike properties of electrons in an isolated atom. When atoms are bound together in a molecule, the wave functions combine to produce new mathematical descriptions that have different shapes. This process of combining the wave functions for atomic orbitals is called hybridization and is mathematically accomplished by the linear combination of atomic orbitals. The new orbitals that...
68.1K
Fermi Level Dynamics01:12

Fermi Level Dynamics

775
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
775
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.1K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.1K
VSEPR Theory and the Effect of Lone Pairs04:01

VSEPR Theory and the Effect of Lone Pairs

53.4K
Effect of Lone Pairs of Electrons on Molecule Geometry
53.4K
Types of Semiconductors01:20

Types of Semiconductors

1.5K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.5K

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

Fermi-level depinning achieved by high-work-function Au<sub>1-x</sub>Se<sub>x</sub> alloy contacts for high-performance p-type WSe<sub>2</sub> transistors.

Nature communications·2026
Same author

Case Report: Where is the boundary between autosomal recessive early-onset Parkinson's disease and dystonia-parkinsonism: a case of PLA2G6-associated neurodegeneration.

Frontiers in human neuroscience·2026
Same author

An AcMYB10-AcF3GT1/GST1 module restricts anthocyanin synthesis in the fruit flesh of kiwifruit.

Plant cell reports·2026
Same author

Stark Many-Body Localization-Induced Quantum Mpemba Effect.

Entropy (Basel, Switzerland)·2026
Same author

Conserved-Potential-Driven Molecular Dynamics Deciphers Formose Reaction Mechanisms.

JACS Au·2026
Same author

Single-Site-Directed Unidirectional Epitaxy of Large-Scale 2D Materials.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Linker Engineering toward NIR-II Metal-Organic Framework with Maximal Emission beyond 1000 nm for Inflammatory Bowel Disease Imaging.

Journal of the American Chemical Society·2026
Same journal

Observing Kinetic Selectivity in Anthracene Photodimerization through Selective Quenching by Excited States of Proximate Rare Earth Cations.

Journal of the American Chemical Society·2026
Same journal

Sequence-Dependent Folding of Recognition-Encoded Melamine Oligomers.

Journal of the American Chemical Society·2026
Same journal

Large Thermo- and Mechanosalient Actuation via Cooperative Twist Elasticity-Induced Packing Motif Conversion.

Journal of the American Chemical Society·2026
Same journal

Discovery and Biosynthesis of Lanthipeptides Featuring an Azepinoindole Scaffold by Radical <i>S</i>-Adenosylmethionine Enzyme-Catalyzed C-C Bond Formation.

Journal of the American Chemical Society·2026
Same journal

Enantiopurity-Controlled Magnetism in a Two-Dimensional Organic-Inorganic Material.

Journal of the American Chemical Society·2026
関連記事をすべて見る

関連する実験動画

Updated: Feb 18, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.1K

二次元半導体ボロン単層

Shao-Gang Xu1,2, Xiao-Tian Li1, Yu-Jun Zhao1

  • 1Department of Physics, South China University of Technology , Guangzhou 510640, People's Republic of China.

Journal of the American Chemical Society
|November 17, 2017
PubMed
まとめ
この要約は機械生成です。

ボロンの新種の半導体単層を発見しました これまでの金属に関する予測に 異議を唱えました 空白工学はバンドの隙間を開き,潜在的な電子デバイスのアプリケーションを可能にします.

さらに関連する動画

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.5K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

関連する実験動画

Last Updated: Feb 18, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.1K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.5K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

科学分野:

  • 材料科学
  • 凝縮物質物理学
  • 固体化学

背景:

  • 二次元 (2D) ボロン材料は,以前は金属であると予測され,観察されました.
  • この金属性質は,半導体ベースの電子機器での使用を制限しました.

研究 の 目的:

  • 半導体ボロン単層の可能性を調査する.
  • ボロン単層の電子特性を調節する方法を探求する.

主な方法:

  • 準粒子G0W0アプローチを用いた最初の原理の計算.
  • 電子帯構造と軌道貢献の分析
  • 構造の安定性と空置工学の調査

主要な成果:

  • 半導体ボロン単層の新しいファミリーが特定されました.
  • 電子帯域のギャップの開きは,六角形の空白の接続ネットワークに起因する.
  • バンドギャップエンジニアリングは,平面内 (s+px,y) と平面外 (pz) の軌道の両方の空白を操作することによって実証された.
  • 予測されたボロン単層は,実験的に観察されたものと比べて安定性を示す.

結論:

  • 半導体ボロン単層は,以前に報告された金属ボロンと大きく異なる.
  • ボロンベースの半導体の設計に有効な経路を提供している.
  • これらの材料は 将来の電子機器の用途に 期待されています