関連する実験動画

Updated: Feb 13, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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GaN/NbN エピタキシアル半導体/超導体ヘテロ構造

Rusen Yan1, Guru Khalsa2, Suresh Vishwanath1

  • 1School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA.

Nature
|March 9, 2018
PubMed
まとめ

研究者は分子ビームエピタキシを用いて,ニオビウムニトリド (NbN) 超伝導体上に半導体ヘテロ構造を直接成長させました. 超伝導性と半導体の性質を組み合わせた 新しい電子装置が実現しました

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