フレキシ・フォト・エフェクト

Ming-Min Yang¹, Dong Jik Kim¹, Marin Alexe²

¹Department of Physics, University of Warwick, Coventry CV4 7AL, UK.

Science (New York, N.Y.)

|April 21, 2018

まとめ

科学者たちは新しい光伏メカニズムであるフレキシ光伏効果を発見し半導体を含めたあらゆる半導体における太陽電池の効率を p-n 結合を必要とせずに向上させました

科学分野:

材料科学
固体物理学
再生可能エネルギー

背景:

ソーラーセルにはショックリー・クエッサーの限界を超えた経路を提供している.
この効果には通常,非中心対称な材料 (例えば,ピエゾ電気,フェロ電気) が必要です.
中心対称性半導体でこの効果を達成するための方法が必要です.

研究の目的:

どの半導体にも適用可能な新しい光伏メカニズムを実証する.
フレキソエレクトリック効果が大規模な太陽光発電効果を媒介する役割を調査する.
シリコンなどの半導体材料で太陽光エネルギー変換を可能にします

主な方法:

原子力顕微鏡やインデントシステムを使用して,センター対称単一結晶の張力グラデーションを誘導する.
フレキシエレクトリック効果が太陽光発電の性質に及ぼす影響を調査する.
ストロンチウムチタネート,二酸化チタン,およびシリコンで生成された光電流を測定する.

主要な成果:

ストレスのグラデーションを通して中心対称性のある材料で重要な光電流を達成しました.
フレキソ光伏効果を証明した. ストレート・グラデーションによる大量光伏効果.
この効果は p-n 結合を必要とせずに機能していることが観察されました.

結論:

フレキシ光伏効果は,フレキシ電気効果を媒介することによって,任意の半導体で実現できます.
この発見により,高効率の太陽電池に使える材料の範囲が広がりました
既存の半導体を使用した現在の太陽電池技術の強化の可能性

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