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Updated: Feb 10, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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無機半導体の異常な可塑性 暗闇の中で

Yu Oshima1, Atsutomo Nakamura2, Katsuyuki Matsunaga2,3

  • 1Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.

Science (New York, N.Y.)
|May 19, 2018
PubMed
まとめ

亜鉛硫化物 (ZnS) のような無機半導体は,光の下での脆い振る舞いとは異なり,完全な暗闇で変形すると驚くべき可塑性を示します. この暗闇による可塑性は 素材の光学帯域の隙間を 大きく変化させます

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