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エネルギー効率の高い電子スイッチとしてのディラック源フィールド効果トランジスタ

Chenguang Qiu1, Fei Liu2, Lin Xu1

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.

Science (New York, N.Y.)
|June 16, 2018
PubMed
まとめ

研究者らは,電子機器の電力消費を大幅に削減するグラフェン・ディラック源フィールド効果トランジスタ (DS-FET) を開発した. この新しいトランジスタは60mV/10年未満のスイッチを達成し,従来のトランジスタの主要な制限を克服します.

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科学分野:

  • 材料科学
  • 半導体物理学
  • ナノ電子

背景:

  • 電子機器の電力消費を減らすことは極めて重要です.
  • フィールド・エフェクト・トランジスタ (FET) は,熱電界限による60mV/十年のサブスリーホールド・スイング (SS) によって制限されます.
  • 電源の電圧を下げることは,電力を減らすための鍵ですが,SSはこれを制限します.

研究 の 目的:

  • FETにおける10年分の60mVのスイング制限を克服する.
  • 電力を消費する新型のトランジスタを 試すためだ
  • トランジスタ性能の改善のためのグラフェン・ディラック源の利用を調査する.

主な方法:

  • グラフェンディラク源フィールド効果トランジスタ (DS-FET) の製造.
  • DS-FETアーキテクチャ内のカーボンナノチューブチャネルを使用した.
  • 室温下でのサブスレッジスイング (SS) と電流レベルを含む装置の性能の特徴.

主要な成果:

  • 40mV/十年の平均電流を達成した.
  • 60mV/十年で証明された高い装置電流 (マイクロメートルあたりI60〜40マイクロアンペア).
  • 最先端のシリコンFETと同様のオンステート電流を実現したが,供給電圧は低かった (0.5V対0.7V).
  • シリコンFETと比較して35mV/10年未満の偏斜SSを観測した.

結論:

  • グラフェン・ディラク・ソースのFETは,動作電圧と電力消費を大幅に低減するための実行可能な経路を提供します.
  • DS-FETの設計は,従来のSSの限界を超えて,よりエネルギー効率の良い電子機器を可能にします.
  • この技術は,次世代の低電力機器のシリコンFETの有望な代替手段となります.