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Updated: Feb 8, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

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ヴァン・デル・ワールスのヘテロ構造の電気インターケレーションにおけるヘテロインターフェース効果

D Kwabena Bediako1, Mehdi Rezaee2,3, Hyobin Yoo1

  • 1Department of Physics, Harvard University, Cambridge, MA, USA.

Nature
|June 22, 2018
PubMed
まとめ

研究者は,ヴァン・デル・ワールス (vdW) ヘテロ構造の原子界面でのリチウム電気干渉を実証した. この方法は,高度なエネルギー貯蔵と電子機器のためのモリブデン二カルコゲン化物 (MoX2) の電荷蓄積を大幅に強化します.

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