熱伝導性が高い立方ボロンアルセニド結晶
Sheng Li1, Qiye Zheng2, Yinchuan Lv3
1Department of Physics, University of Texas at Dallas, Richardson, TX 75080, USA.
Science (New York, N.Y.)
|July 7, 2018
まとめ
研究者らは,立方ボロンアルセニド (BAs) が室温で高い熱伝導性を示すことを発見した. この新しい材料は,パワーエレクトロニクスと光電子学の熱分散を大幅に改善します.
科学分野:
- 材料科学
- 固体物理学
- 熱管理
背景:
- パワーエレクトロニクスと光電子学の高い熱密度はデバイスの性能を制限する.
- 効率的な散熱には 優れた熱伝導性を有する高度な材料が必要です
- 現在の材料は 極端な熱負荷の管理で 課題に直面しています
研究 の 目的:
- 超高熱伝導性を有する材料を実験的に発見し,特徴づけること.
- 熱管理ソリューションとして立方ボロンアルセニド (BAs) を調査する.
- 高電力密度の電子アプリケーションのBAの実現可能性を評価する.
主な方法:
- キュービックボロンアルセニド (BAs) の結晶を育てるための化学蒸気輸送技術.
- 室温での熱伝導性の実験測定
- シリコンカーバイド,ダイヤモンド,グラファイトなどの高伝導性材料との比較分析.
主要な成果:
- 立方ボロンアルセニド (BAs) は,室温での熱伝導性が1000 ± 90W/m·Kであることを示した.
- BAはシリコンカーバイドの3倍の熱伝導性を示しています.
- 導電性はダイヤモンドとグラファイトの基礎平面値にしか超えられない.
結論:
- 立方ボロンアルセニド (BAs) は,実験的に検証された超高熱伝導性材料です.
- BAsは要求の高い電子機器の熱管理のための有望な代替手段を提供します.
- この発見は 次世代のパワーエレクトロニクスと 光電子技術の開発の道を開きます
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