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表面二極調節と多次元モデリングによる半導体ヘテロ構造のチャージ転送メカニズムを特定する

Ryan T Pekarek1, Kara Kearney2,3, Benjamin M Simon1

  • 1Department of Chemistry , The University of Texas at Austin , Austin , Texas 78712 , United States.

Journal of the American Chemical Society
|October 4, 2018
PubMed
まとめ

TiO2で保護されたシリコンフォトアノドの間の穴移転は,界面分子二極体によって制御され,熱電子放出または帯域内トンネリングによって発生します. この研究は,光電化学装置における電荷輸送の理解を深める.

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