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Updated: Feb 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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2次元のFe3GeTe2でゲート調節可能な室温フェロマグネティズム

Yujun Deng1,2,3, Yijun Yu1,2,3, Yichen Song1,2,3

  • 1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.

Nature
|October 24, 2018
PubMed
まとめ

研究者らは,2次元 (2D) の鉄3ゲルマニウムテルリド (Fe3GeTe2) モノレイヤを分離する新しい技術を開発した. この2次元素材は 電子ゲートを使って 室温に調節可能な 鉄磁気性を表しており 先進的なスピントロニック装置への道を切り開いています

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