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Updated: Feb 3, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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シリコン上のキラル金属表面のエピタキシアル電位

Meagan V Kelso1, John Z Tubbesing2, Qingzhi Chen2

  • 1Department of Materials Science and Engineering and Graduate Center for Materials Research , Missouri University of Science and Technology , Rolla , Missouri 65409-1170 , United States.

Journal of the American Chemical Society
|October 27, 2018
PubMed
まとめ

研究者は,電化学的にシリコンウエーフェルに金を積むことで,触媒と分離のためのキラル表面を作成しました. この方法はエナチオメア表面を生成し,グルコースエナチオメアの選択的酸化を可能にし,高価な単一結晶の使用を避けます.

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