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Updated: Jan 31, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

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アンチアロマティックリングベースのオーガノメタリックフレームワークによる強化キュリー温度を持つ二次元磁気半導体の実現

Xingxing Li1, Jinlong Yang1

  • 1Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China.

Journal of the American Chemical Society
|December 25, 2018
PubMed
まとめ

研究者らは,高キュリー温度を持つ2D磁性半導体を作るために,有機金属フレームワークのアンチアロマティックリングを使用する新しい方法を提案しています. このアプローチは,室温のフェロマグネチズムの現在の材料の限界を克服します.

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