ヴァン・デル・ワールス・スタッキング 誘導された Schottky から Ohmic への移行: 多層インセの 2D メタル
Tao Shen1, Ji-Chang Ren1, Xinyi Liu1
1Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China.
Journal of the American Chemical Society
|January 29, 2019
まとめ
InSeのような二次元材料で金属の接触を制御することは 電子機器の鍵です ヴァン・デル・ワールスのスタッキングとインセ層の増加は,フェルミレベルのピニングを減らすことで効率的なオーム接触を作成できます.
科学分野:
- 材料科学
- 凝縮物質物理学
- ナノテクノロジー
背景:
- 電子機器は二次元 (2D) の材料を使用し,金属の接触が必要です.
- コンタクトタイプ (オーム式またはショットキー式) は,デバイスの性能に重大な影響を及ぼします.
- フェルミレベルピニング (FLP) は,低抵抗オームコンタクトの達成を困難にする.
研究 の 目的:
- InSeと2Dの金属の間のショットキーバリアの高さに対するヴァン・ダー・ワールスの堆積の効果を調査する.
- FLPを抑制し,オームコンタクトを達成する方法を模索する.
- InSeベースの装置の最適な電極材料を特定する.
主な方法:
- 密度関数理論 (DFT) の計算を用いた.
- ショットキー・バリアの高さと フェルミ・レベルを分析した.
- 電子特性に対する InSe 層番号の影響を評価した.
主要な成果:
- ヴァン・デル・ワールズの堆積は,FLPを抑制することによって,ショットキーの障壁を効果的に調節します.
- スコッティからオームまで,InSe層の数の移行を増加させる.
- Cd3C2は2D InSeにとって最も互換性のある電極であると確認された.
結論:
- ヴァン・デル・ワールスのスタッキングは,インセメタル接触を制御するための方法を提供します.
- インセの層設計はオーム接触形成のための実行可能な戦略です.
- この研究により,InSeベースのナノデバイスの開発が容易になります.
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