超クリーングラフェンの成長のための銅を含む炭素原料
Kaicheng Jia1, Jincan Zhang1,2, Li Lin1
1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , People's Republic of China.
Journal of the American Chemical Society
|May 7, 2019
まとめ
研究者達は,超清潔なグラフェンを育てるために,銅 (II) 酸塩を用いた新しい化学蒸気堆積法 (CVD) を開発した. この汚染のないグラフェンは,高度なアプリケーションのために,光学および電気的特性を高めています.
科学分野:
- 材料科学
- ナノテクノロジー
- 化学工学
背景:
- 化学蒸気堆積 (CVD) は,大規模な高品質のグラフェン生産に不可欠です.
- CVDで栽培されたグラフェンの表面汚染は,電子,光電子,膜アプリケーションでの使用を制限する.
研究 の 目的:
- 汚染のないグラフェンの成長のための改造されたガス相反応を開発する.
- CVDで栽培されたグラフェンの表面の清潔さと性質を高めるため
主な方法:
- 炭素源として銅 (II) アセテート (Cu) (OAc) 2) を用いた高温CVD工法を使用した.
- 表面汚染を抑制するガス相銅含有量の増加の役割を調査した.
- 炭素原料の分解とそのグラフェンの品質への影響を分析した.
主要な成果:
- 約99%の表面クリーンな超クリーンなグラフェンの大規模生育を達成しました.
- グラフェンフィルムの光学および電気的性質を大幅に改善しました.
- ガス相銅の含有量が増加すると,汚染の形成が効果的に抑制される.
結論:
- 銅 (II) アセテットを用いたCVDアプローチは,高品質で汚染のないグラフェンの実現可能な経路を提供します.
- この方法は,グラフェンの成長を制御するガス相反応機構に関する新しい洞察を提供します.
- 超クリーンなグラフェンは,高度な電子,光電子,膜の応用の可能性があります.
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