ダイエレクトリック基板上の均一なグラフェン単層のための一次核化主導の化学蒸気沉積成長
Huaping Wang1,2, Xudong Xue3, Qianqing Jiang1,2
1Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , People's Republic of China.
Journal of the American Chemical Society
|July 3, 2019
まとめ
研究者たちは 介電基板に 均一なグラフェンフィルムを 育てる新しい方法を開発しました この前駆体改変戦略は,高度な電子と光電子のグラフェン品質を向上させます.
科学分野:
- 材料科学
- ナノテクノロジー
- 固体物理学
背景:
- 高品質のグラフェンの直接化学蒸気堆積 (CVD) 成長は,介電基板に電子と光電子にとって不可欠です.
- 既存の方法は,しばしば不均一または低品質のグラフェンフィルムを生成します.
研究 の 目的:
- 介電基板に超均一なグラフェン単層フィルムを実現するための新しい戦略を開発する.
- 改造された介電面でのグラフェンの成長の背後にあるメカニズムを調査する.
主な方法:
- グラフェンの成長中に二次核化を抑制するために,前駆体改変戦略が採用された.
- シリカ基板の水酸化により表面の性質が変化した.
- 成長のダイナミクスを理解するために,メカニズム研究が行われました.
- フィールドエフェクトトランジスタ (FET) は,成長したグラフェンフィルムを使用して製造された.
主要な成果:
- 先駆者改変戦略は二次核化を成功裏に抑制し,超均一なグラフェン単層フィルムにつながった.
- シリカ基板の水酸化により,グラフェンエッジと基板の結合が弱まり,原発核化主導の成長が促進された.
- グラフェンフィルムはFETで特殊な電気性能を示し,充電キャリアのモビリティは空気中に3800cm2V-1s-1まで達した.
- このモビリティは,ダイエレクトリックで栽培されたグラフェンの以前に報告された値より大幅に高い.
結論:
- 新しい前駆体改変戦略は,高品質で均一なグラフェン単層を介電基板上で生産するのに有効です.
- この進歩は,高度な電子および光電子機器におけるグラフェンの実用的な応用のための新しい可能性を開きます.
- 断熱材料で制御されたグラフェン合成のための新しい経路を提供する.
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