GaAsまたはInAsに基づく超四面体層
Valentin Weippert1, Arthur Haffner1, Alexis Stamatopoulos1
1Department of Chemistry , University of Munich (LMU) , Butenandtstraße 5-13 , 81377 Munich , Germany.
Journal of the American Chemical Society
|July 6, 2019
まとめ
超四面体構造を持つ新しい三元アルセニド化合物が合成された. これらの新材料は,GaAsとInAsに類似した直接帯域ギャップ半導体であり,安定性のために空白を必要としません.
科学分野:
- 固体化学と材料科学について
- 結晶構造の決定と特徴付け
- 半導体物理学について
背景:
- 独特の構造モチーフを持つ新型半導体材料の探索
- 三次アルセニドの構造-性質関係を理解する.
- 空白のない超四面体構造を調べている.
研究 の 目的:
- 超四面体構造を持つ新しい固体化合物を合成し,特徴づけます.
- M15Tr22As32とM3Ga6As8の結晶構造を決定する (M = Sr, Eu; Tr = Ga, In).
- これらの新材料の電子的,磁的性質を調査する.
主な方法:
- 熱元素による固体化合物の合成
- 単結晶と粉末のX線 difraktionを用いた結晶構造の決定.
- 光学帯のギャップ,抵抗性,ホール効果,磁気感受性の測定による特徴付け.
- 密度関数理論 (DFT) の計算
主要な成果:
- M15Tr22As32およびM3Ga6As8化合物の合成と構造の決定に成功しました.
- ポリメリックT5またはT6超四面体を含むHgI2型構造の階層的な変数の識別.
- GaAsまたはInAsベースの最初のバイナリ空白のT5およびT6超四面体の発見.
- これらの化合物がGaAsとInAsに類似した直接帯域ギャップ半導体であることを示す.
- 10K以下のEu2+とアンチフェロマグネットの確認
結論:
- 合成された化合物は,新しいGaAsまたはInAsベースの超四面体構造を表しています.
- これらの材料は,関連するカルコゲン化物とは異なり,空白がない状態で安定しています.
- これらの化合物は,電子用途に適した半導体特性を持っています.
- ユーロピウムを含む化合物は 興味深い磁気性を示します
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