炭素ナノ回路のためのナノ孔性のグラフェンの量子干渉工学

Gaetano Calogero¹, Isaac Alcón¹, Nick Papior¹

¹Center for Nanostructured Graphene (CNG) , DK-2800 Kongens Lyngby , Denmark.

Journal of the American Chemical Society

|July 26, 2019

まとめ

化学者は,ナノ孔性のグラフェン (NPG) ブリッジを設計し,グラフェンナノリボン (GNR) の間の電子クロスストークをブロックしました. この隔離により,電流は個別のGNR内に閉じ込められ,炭素ナノ回路が強化されます.

科学分野:

材料科学
凝縮物質物理学
ナノテクノロジー

背景:

炭素ナノ構造はナノエレクトロニクスのための正確で汎用的なプラットフォームを提供します.
グラフェンナノリボン (GNR) の配列であるナノ孔性のグラフェン (NPG) は,炭素ナノ回路の可能性を示している.
NPGのGNR間の電子クロスストークは電流を分散させ,デバイスの性能を制限する.

研究の目的:

NPGのブリッジを化学的に設計し,GNR間のクロスストークをブロックする.
NPG内の個々のGNRを電子的に分離する.
先進的なナノ回路のためのGNR内の限られた電流を可能にします.

主な方法:

マルチスケール計算を使って電子特性をモデル化します
GNR間のブリッジの化学改変を設計する.
0.7 nm幅のGNRチャネル内の電流封鎖をシミュレートする.

主要な成果:

NPGブリッジの化学設計が提案され,破壊的な量子干渉を誘導しました.
この設計は,GNR間の電子クロスストークを効果的にブロックします.
計算では,最大100 nmの単一のGNR内に限られた電流を示しています.

結論:

開発された化学設計は,NPGのGNRを電子的に分離するための方法を提供します.
この分離は高性能カーボンナノ回路の実現に不可欠である.
この発見は将来の炭素ベースの電子機器の量子設計に寄与します

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