ドーピングされていないガリウムニトリド量子井戸の二次元穴ガス
Reet Chaudhuri1, Samuel James Bader2, Zhen Chen2
1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. rtc77@cornell.edu.
まとめ
研究者は,ドーパントなしでガリウム窒素で高密度の二次元 (2D) 穴ガスを作成しました. この突破により,広帯域エレクトロニクスのための低抵抗pチャンネルトランジスタが可能になります.
科学分野:
- 材料科学
- 凝縮物質物理学
- 半導体物理学
背景:
- 幅広い帯域のpチャネルトランジスタの開発は,高度な電子機器にとって極めて重要です.
- 高伝導性の二次元 (2D) 穴ガスは,そのような装置に不可欠ですが,ニトリド半導体では達成することは困難です.
- 既存の方法はしばしば受容ドーパントに依存し,その性能を制限することができます.
研究 の 目的:
- ナトリド半導体における高密度2Dホールガスの観測を報告する.
- この二次元ホールのガスが 受け入れ器のドーパントなしで 形成されるのを証明するために
- この新しい2Dホールのガスの性質を, デバイスの潜在的用途に特徴づける.
主な方法:
- アルミニウムニトリド (AlN) の基板にガリウムニトリド (GaN) のエピタキシアル増殖
- ホール効果の測定を用いた2Dホールガス密度の測定
- 低温条件を含む様々な温度でのシート抵抗の特徴.
主要な成果:
- GaN/AlNヘテロ構造における二次元穴ガスの観察.
- 約5 × 10 ^ 13cm ^ 2の2Dホールの高密度ガスを達成した.
- 冷凍温度まで安定した穴のガス密度を示した.
- 広帯域の半導体で報告された最も低いp型シート抵抗のいくつかを達成しました.
結論:
- GaN/AlNの極化効果は,ドーピングなしで高品質の2Dホールガスの形成を可能にします.
- これらの発見は,先進的な広帯域ギャップpチャネルトランジスタの道を開く.
- 観測された2Dホールガスは,ナトリド界面物理学の基礎研究のための貴重なプラットフォームとして機能します.
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