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Updated: Jan 4, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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BiVO4フォトアノードにおける電荷キャリアダイナミクスに対する酸素空位占有量の影響

Shababa Selim1, Ernest Pastor1, Miguel García-Tecedor2

  • 1Department of Chemistry and Centre for Plastic Electronics, MSRH, White City Campus , Imperial College London , London W12 0BZ , United Kingdom.

Journal of the American Chemical Society
|October 31, 2019
PubMed
まとめ

BiVO4フォトアノードにおける酸素空白は,性能の鍵となる. この研究は,それらのスペクトルシグネチャを特定し,それらのイオン化が,改善された光電化学アプリケーションのための電荷キャリアダイナミクスにどのように影響を与えるかを示しています.

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