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CMOSレベルの電圧で動作するナノ光電機スイッチ
Christian Haffner1,2,3, Andreas Joerg4, Michael Doderer4
1Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland. christian.haffner@nist.gov.
Science (New York, N.Y.)
|November 16, 2019
まとめ
研究者は,補完的な金属酸化物半導体 (CMOS) の電圧を使用して,高速で低損失の光スイッチングのための新しいハイブリッド光子-プラズモニックデバイスを開発しました. この画期的な発見により オンチップの光電子機器と 光ニューラルネットワークが実現しました
科学分野:
- 光電子機器
- ナノフォトニクス
- プラズモニック
- 統合フォトニクス
- MEMS/NEMSについて
背景:
- チップ内統合された光電子は,光学ネットワークと補完的な金属酸化物半導体 (CMOS) 電子間のシームレスなインタフェースを必要とします.
- 既存の技術は,効率的で,低損失で,CMOS製造と互換性のある高速光調節を実現する上で課題に直面しています.
研究 の 目的:
- CMOS対応の電圧を使用して光を切り替えることができるハイブリッド光子-プラズモンの構造を実証する.
- オンチップの光学システムの最小限の光学損失で高速なスイッチング速度を達成します.
主な方法:
- 金膜を用いたマイクロメートルスケールのハイブリッド光子-プラズモニック波導体の製造.
- 光電機効果の活用により,静電操作により空気隙間が調節され,光の閉じ込めが変化する.
- プラズモンの閉じ込めを空気隙間に統合し,強い光電機械結合とフォトンの閉じ込めにより,損失を最小限に抑える.
主要な成果:
- 0.1デシベルという非常に低い光学損失でCMOS電圧で光を切り替えることを成功裏に実証しました.
- 混乱した黄金膜の低質量により,数十ナノ秒程度の急速なスイッチング速度を達成しました.
- プラズモンの光が変化する空隙に閉じ込められているため,強力な光電機効果が観察されました.
結論:
- 開発されたハイブリッドアーキテクチャは,CMOSに統合された再プログラム可能な光学システムを構築するための実行可能な経路を提供します.
- この技術は ディープラーニングのための光学ニューラルネットワークなどの分野で 重要な応用可能性を秘めています
- 証明されたアプローチは,高性能でスケーラビリティを持つ先進的なオンチップ光電子機器への道を開く.
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