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Updated: Dec 31, 2025

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可能性のあるSnベースのハイブリッドペロブスキート鉄電半導体

Lina Li1, Xitao Liu1, Chao He1

  • 1State Key Laboratory of Structural Chemistry , Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou , Fujian 350002 , China.

Journal of the American Chemical Society
|January 7, 2020
PubMed
まとめ

研究者らは,有意な自発的偏りを示す新しい無鉛の鉄電半導体 (C4H9NH3) 2 ((NH3CH3) 2Sn3Br10) を開発した. この発見により 環境にやさしい 高性能の太陽電池やセンサーの 開発が進められます

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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