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Updated: Dec 24, 2025

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室温のシリコンジオメトリックダイオードにおける準弾性電子のラッチェッティング

James P Custer1, Jeremy D Low1, David J Hill1

  • 1Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599, USA.

Science (New York, N.Y.)
|April 11, 2020
PubMed
まとめ

科学者は非対称な半導体ナノワイヤを使用して 室温で電子ラッチェティングを達成しました この突破により 電子の流動は一方的に可能になり 電子とエネルギー収集の 応用が先行しました

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