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Updated: Dec 17, 2025

Flash Infrared Annealing for Perovskite Solar Cell Processing
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"ペロブスキート太陽電池における極小のオープン回路の電圧損失のための受容分子構造の調整"への訂正

Shuang Yang, Jun Dai, Zhenhua Yu

    Journal of the American Chemical Society
    |June 25, 2020
    PubMed
    まとめ

    No abstract available in PubMed .

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    関連する概念動画

    P-N junction01:11

    P-N junction

    997
    A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
    997
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