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Updated: Nov 20, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

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チップ強化ラーマン分散による金属分子インターフェースにおけるバイアス誘発電子密度シフトの探査

Kai Braun1,2, Otto Hauler1, Dai Zhang1,2

  • 1Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany.

Journal of the American Chemical Society
|January 25, 2021
PubMed
まとめ

この研究では,付加電圧が金属表面上の分子における電荷分布にどのように影響するかを観察するために,尖端強化ラーマン光譜法 (TERS) を使用しています. オーガニック・エレクトロニクスにとって不可欠なインタフェースの 電子的振る舞いに関する新しい洞察を 提供しています

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