Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

Superconductor01:24

Superconductor

1.5K
A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
1.5K
Types Of Superconductors01:28

Types Of Superconductors

1.4K
A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
1.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

581
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
581
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

421
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
421
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.1K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.1K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.5K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
1.5K

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

Enhanced Coercivity in Spin-Orbit-Proximitized Cr<sub>3</sub>Te<sub>4</sub> Ultrathin Films.

Nano letters·2026
Same author

Layer photovoltaic effect in a two-dimensional antiferromagnet with parity-time symmetry.

Nature materials·2026
Same author

Picosecond ultralow-power switching device based on an antiferromagnet.

Science (New York, N.Y.)·2026
Same author

Lattice softening and diffusive dynamics in the polar metal LiReO<sub>3</sub>.

Science advances·2026
Same author

Perfectly harmonic spin cycloid and multi-Q textures in the Weyl semimetal GdAlSi.

Nature communications·2026
Same author

Magnetization generation and giant nonlinear transport at symmetry-engineered interfaces.

Nature communications·2026

関連する実験動画

Updated: Nov 12, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.0K

2次元超伝導体におけるゲート制御のBCS-BECクロスオーバー

Yuji Nakagawa1,2, Yuichi Kasahara3, Takuya Nomoto1

  • 1Department of Applied Physics, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656, Japan.

Science (New York, N.Y.)
|March 19, 2021
PubMed
まとめ

研究者らは,2次元の超伝導体におけるバーディン-クーパー-シュリーファー (BCS) 超流動性とボース-アインシュタイン凝縮 (BEC) の間の移行をキャリア密度を制御することによって観察した. この研究は,新しい材料システムでBCS-BECのクロスオーバーを調査します.

さらに関連する動画

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.8K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

10.8K

関連する実験動画

Last Updated: Nov 12, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.0K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.8K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

10.8K

科学分野:

  • 凝縮物質物理学
  • 超伝導性
  • 量子材料について

背景:

  • バーディン-クーパー-シュリーファー (BCS) 超流動性とボース-アインシュタイン凝縮 (BEC) はペア化されたフェルミオンの異なる量子基底状態を表しています.
  • これらの状態の間の移行を理解することは 基礎物理学と潜在的応用にとって極めて重要です

研究 の 目的:

  • 2次元超伝導体におけるBCS超流動性とBECの交差を調査する.
  • ゲートドーピング半導体をBCS-BECクロスオーバーの研究プラットフォームとして使用する可能性を調査する.

主な方法:

  • 2次元超伝導体としての電子ドーピングジルコニウム塩化物の製造と特徴付け.
  • イオンゲーティングを利用して キャリア密度を体系的に変化させる
  • 電気抵抗とトンネリングスペクトルの同時測定により,相図が作られます.

主要な成果:

  • BCSからBECの限界へのクロスオーバーが,キャリアの密度を調節することによって実証された.
  • 低ドーピングのフェーズを特定した
  • BCS-BECクロスオーバー体制の理論的予測と一致する超伝導的移行温度とフェルミ温度比を観測した.

結論:

  • 電子ドーピングされたジルコニウム窒素塩化物は,二次元のBCS-BECクロスオーバーを研究するための理想的なプラットフォームとして機能します.
  • 観測された行動は,フェルミオン超流動性と凝縮に関する理論の実験的検証を提供します.
  • このシステムは,他の固体システムと比較して,BCS-BECクロスオーバー研究に簡素化されたアプローチを提供します.