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LaAlO3/KTaO3のインターフェイスで超伝導性の電場制御
Zheng Chen1, Yuan Liu1, Hui Zhang2
1Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China.
Science (New York, N.Y.)
|May 14, 2021
まとめ
研究者は,ゲート電圧を使用してLaAlO3 / KTaO3インターフェースの超伝導状態を調節し,ドーム状の移行温度依存性を観察しました. このチューニングは主にキャリアのモビリティに影響し,密度ではなく,インターフェースの障害の変化を示唆します.
科学分野:
- 凝縮物質物理学
- 材料科学
- 超伝導性
背景:
- LaAlO3 (ランタンアルミネート) とKTaO3 (タンタル酸カリウム) の間の酸化界面は,超伝導状態を宿していることが知られている.
- オキシードインターフェイスで発生する電子特性を理解し制御することは,新しいデバイスのアプリケーションにとって極めて重要です.
研究 の 目的:
- 電場ゲーティングを使用してLaAlO3/KTaO3 ((111) インターフェースの超伝導状態の調節性を調査する.
- ゲート電圧,キャリア特性,超伝導性と絶縁状態の出現の関係を解明する.
主な方法:
- LaAlO3 / KTaO3 のヘテロ構造の製造.
- KTaO3基板にゲート電圧 (VG) を適用してインターフェースの性質を調節する.
- 温度とゲート電圧の関数として電気輸送測定 (抵抗,キャリア密度,移動性).
主要な成果:
- インターフェースの超伝導性は,ゲート電圧を適用することによって,超伝導から絶縁状態に継続的に調整できます.
- ゲート電圧 (VG) に対する超伝導移行温度 (Tc) のドーム状の依存性が観察された.
- 電気ゲーティングはキャリアモビリティに大きな影響を及ぼし,キャリア密度にはわずかな影響があり,インターフェース障害の変化を示唆しています.
結論:
- 観測されたチューニングは,キャリアの空間的プロフィールの変化とインターフェースの実際の混乱に起因する.
- 超伝導と絶縁の両方の低温での抵抗飽和は,量子金属状態の存在を示唆しています.
- この量子金属状態は"超伝導体故障"または"脆弱な絶縁体"のシナリオと関連付けられます.
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