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Updated: Jun 14, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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Mg2In3Si2P7:ZnGeP2から派生した四次的なダイヤモンドのようなフォスフィード赤外線非線形光学物質

Jindong Chen1,2, Hongxiang Chen3,4, Feng Xu1

  • 1Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.

Journal of the American Chemical Society
|July 1, 2021
PubMed
まとめ

研究者らは赤外線非線形光学用の新しいフォスフィード材料Mg2In3Si2P7を開発した. 巨大な二次和音の生成,適したバンドギャップ,そして適度な二重断裂の希少な組み合わせを示しています.

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Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots08:21

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

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関連する概念動画

Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...