Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

Types of Semiconductors01:20

Types of Semiconductors

988
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
988
P-N junction01:11

P-N junction

737
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
737
Photoreceptors and Visual Pathways01:22

Photoreceptors and Visual Pathways

6.6K
At the molecular level, visual signals trigger transformations in photopigment molecules, resulting in changes in the photoreceptor cell's membrane potential. The photon's energy level is denoted by its wavelength, with each specific wavelength of visible light associated with a distinct color. The spectral range of visible light, classified as electromagnetic radiation, spans from 380 to 720 nm. Electromagnetic radiation wavelengths exceeding 720 nm fall under the infrared category,...
6.6K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.0K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.0K
Photoluminescence: Applications01:14

Photoluminescence: Applications

517
Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
517

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS<sub>2</sub> Memory Transistor.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Wet Transfer of In Situ Grown Azo-Containing Two-Dimensional Conjugated Covalent Organic Framework Films for Photoswitchable Electronic Devices.

Angewandte Chemie (International ed. in English)·2026
Same author

Manipulating the Photoluminescence Pathway in Metal Nanoclusters by Atomic Structural Editing.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Programmable ion-protein networks from sodium caseinate: a sustainable platform for soft functional materials.

Materials horizons·2026
Same author

Confinement of PEDOT:PSS in Covalent Organic Frameworks for Stable Organic Electrochemical Transistors.

ACS applied materials & interfaces·2026
Same author

Site-selective functionalization of solution-processed transition metal dichalcogenides for vertical and lateral covalent networks and heterostructures.

Nanoscale·2026
Same journal

Radical Cascades on Seawater Microdroplets Drive Atmospheric Mercury Oxidation.

Journal of the American Chemical Society·2026
Same journal

Superior Selective and Fast NH<sub>3</sub> Adsorption of Soft Porous MOF/Ionic Liquid Composites with Ordering Phase Transitions.

Journal of the American Chemical Society·2026
Same journal

Systematic Catalyst Variation for Improved Stereoselective Epoxide Polymerization: Subtle Modifications Resulting in Superior Efficiency.

Journal of the American Chemical Society·2026
Same journal

Deciphering the Halide Chemistry of Cl<sup>-</sup> and Br<sup>-</sup> in Enhancing Kinetics of Mg Plating/Stripping.

Journal of the American Chemical Society·2026
Same journal

Electrosynthesis of C<sub>6</sub> Chemicals by Propylene Oxidative Coupling on Au Surface.

Journal of the American Chemical Society·2026
Same journal

Statistical AI Enables Precise Screening of Multielement Catalysts.

Journal of the American Chemical Society·2026
関連記事をすべて見る

関連する実験動画

Updated: Oct 3, 2025

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K

二次元紫色リン: (光電子) のp型半導体

Antonio Gaetano Ricciardulli1, Ye Wang1, Sheng Yang2

  • 1University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000 Strasbourg, France.

Journal of the American Chemical Society
|February 18, 2022
PubMed
まとめ
この要約は機械生成です。

紫色リン (VP) は,数層の薄膜に剥がれ,p型半導体としての有望な性質を明らかにする. この発見は,先進的な光電子機器と補完性金属酸化物半導体 (CMOS) デバイスのための新しい材料を提供します.

さらに関連する動画

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

12.1K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

関連する実験動画

Last Updated: Oct 3, 2025

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

12.1K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

科学分野:

  • 材料科学
  • 凝縮物質物理学
  • ナノテクノロジー

背景:

  • 次世代の電子機器には 二次元の (2D) 材料が不可欠です
  • p型2D半導体の欠如は,特にCMOSアプリケーションのデバイスエンジニアリングを制限しています.
  • 新しいp型二次元材料は,現在のムーアの法則の限界を超えて前進するために不可欠です.

研究 の 目的:

  • 紫色リン (VP) を二次元材料に剥がす.
  • 皮を剥いたVPの光電子特性について調べるため
  • 次世代の電子機器のための VP の可能性を評価する.

主な方法:

  • 紫色リン結晶の液相剥離を超音波で支援する.
  • VP薄膜を用いたフィールド効果トランジスタ (FET) の製造と特徴付け
  • VP付きの光検出器とCMOSインバーター配列の製造と特徴付け

主要な成果:

  • 剥離されたVPは,高いオン/オフ比 (10^4) と穴の可動性 (2.25 cm^2 V^-1 s^-1) を有するp型輸送を示す.
  • VPベースの光検出器は良好な光反応性 (10 mA W^-1) と速い応答時間 (0.16 s) を示しています.
  • CMOSインバーターに統合されたVPは,有意な電圧増加を示している (∼17).

結論:

  • バイオレット・フォスファーは有望で多用途なp型2D半導体です
  • 拡張可能な生産と優れた光電子性能により,VPは高度な (光) 電子機器に適しています.
  • 電子・フォトニック・デバイスの開発に 新たな道を開きます