フォトニック統合回路ベースのエルビウムドーピング増幅器
まとめ
研究者は145ミリワットの出力と30デシベルの増幅を持つシリコンニトリド光子統合回路エルビウム増幅器を開発しました. 通信やレーザー技術のための小型化され 高性能の光学装置を可能にします
科学分野:
- 光学について
- 材料科学
- 光学通信
背景:
- エルビウム添加繊維増幅器は 光通信とレーザーに不可欠です
- 現在のエルビウムベースの光子集積回路 (PIC) は,実用的なアプリケーションに十分な出力がない.
研究 の 目的:
- ハイパワーなエルビウムドーピング PICアンプを デモンストレーションする
- 先進的なアプリケーションのPICにおけるエルビウムイオンの電力制限を克服する.
主な方法:
- 超低損失シリコンナトリド (Si3N4) PICでイオンインプラント技術を使用した.
- エルビウムイオンを Si3N4 フォトニック・プラットフォームに統合した.
主要な成果:
- 145ミリワットの出力と30デシベル以上の小さな信号獲得を達成しました.
- 最先端のIII-V半導体増幅器を上回った
- ソリトンのマイクロコンブ出力 100倍に
結論:
- 開発されたSi3N4 PICエルビウム増幅器は,商用ファイバー増幅器の性能に匹敵する.
- フェムト秒レーザーのような 繊維ベースの装置の小型化を可能にします
- 低騒音フォトニックマイクロ波生成とWDM光通信の電力要求を満たしています.
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