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Updated: Sep 7, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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非揮発性スピントロニックメモリの二次元材料の見通し

Hyunsoo Yang1, Sergio O Valenzuela2,3, Mairbek Chshiev4,5

  • 1Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore. eleyang@nus.edu.sg.

Nature
|June 22, 2022
PubMed
まとめ

新興の磁気ランダムアクセスメモリ (MRAM) は,二次元のヴァン・ダー・ワールズ材料を統合することで強化できます. この組み合わせは 低電力技術と高度なメモリデバイスの 破壊的な改善を約束します

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