Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

905
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
905
Modes of Operations of BJT01:21

Modes of Operations of BJT

1.4K
A Bipolar Junction Transistor (BJT) is a versatile component in electronics, functioning in four distinct modes based on the biasing of its junctions: active, saturation, cut-off, and inverted modes.
Active Mode: The most common mode for amplification, the active mode features a forward-biased emitter-base junction and a reverse-biased base-collector junction. This setup enables electrons to be injected from the emitter to the base while blocking the majority carriers at the collector. The...
1.4K
Switching of BJT01:22

Switching of BJT

493
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
493
Configurations of BJT01:16

Configurations of BJT

618
Bipolar Junction Transistors (BJTs) are categorized into various types based on their configurations, each with distinct characteristics and applications. The configurations are primarily differentiated by which terminal—base, emitter, or collector—is common to both the input and output circuits.
The common base configuration is noted for its high voltage gain, positioning it as an ideal choice for single-stage amplifier circuits, such as microphone pre-amplifiers. A notable...
618
BJT Amplifiers01:14

BJT Amplifiers

591
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
591
Working Principle of BJT01:15

Working Principle of BJT

660
A Bipolar Junction Transistor (BJT), specifically a PNP transistor in a common-base configuration, effectively amplifies or switches electronic signals by controlling the flow of charge carriers. This discussion focuses on its operation in the active mode.
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...
660

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

On-Water Surface Synthesis of 2D Conjugated Metal-Organic Framework Films With Controllable Layer Orientation Enabling High-Performance Chemiresistive Sensing.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ultranarrow nanochannels in a staggered two-dimensional polymer membrane enhance electric double-layer coverage for osmotic energy harvesting.

Nature communications·2026
Same author

Leaftronics: Bio-Fractal Scaffolds From Leaf Venation for Low-Waste Electronics.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Conductive Hydrogels for Exogenous Sensing and Cell Fate Control.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Near-unity broadband photonic metamaterial absorber for thermoelectric energy harvesting in Space.

Physical chemistry chemical physics : PCCP·2026
Same author

Charge and Spin Transport in Doped Rubrene Thin-Film Crystals.

ACS nano·2026
Same journal

Daily briefing: 'Cyborg' cockroaches breathe underwater with printed suit.

Nature·2026
Same journal

China boosts prestigious grants for young scientists - will it ease competition?

Nature·2026
Same journal

Incoming US science academy chief vows to 'double down' on research.

Nature·2026
Same journal

Author Correction: Synthesis of enantioenriched atropisomers by biocatalytic deracemization.

Nature·2026
Same journal

Electrodeposited self-assembled molecules for perovskite photovoltaics.

Nature·2026
Same journal

Neutrino's nursery found: the 'Shadow Blaster'.

Nature·2026
関連記事をすべて見る

関連する実験動画

Updated: Sep 7, 2025

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.8K

有機双極トランジスタ

Shu-Jen Wang1, Michael Sawatzki1, Ghader Darbandy2

  • 1Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden, Germany.

Nature
|June 22, 2022
PubMed
まとめ
この要約は機械生成です。

研究者らは,垂直構造とラブレンの薄膜を用いた新しい有機双極トランジスタを開発した. これらのデバイスは性能が向上し,どこにでも存在する電子機器のスイッチング速度を高速化します.

さらに関連する動画

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

関連する実験動画

Last Updated: Sep 7, 2025

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.8K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

科学分野:

  • 材料科学
  • オーガニック電子
  • 半導体装置

背景:

  • 薄膜半導体は新興アプリケーションにとって不可欠です.
  • オーガニック半導体は 低コストで バイオコンパティビリティを 備えています
  • オーガニック・トランジスタの性能を向上させることが 潜在能力を最大限に発揮する鍵です

研究 の 目的:

  • 性能が向上した有機双極トランジスタを紹介する.
  • 新しい垂直構造と高結晶性の有機ゴム薄膜を導入する.
  • 有機半導体におけるマイノリティキャリアの拡散長さを調査する.

主な方法:

  • 新しい垂直構造を用いた有機双極トランジスタの製造.
  • 結晶性の高い有機ゴム素の薄膜の堆積
  • 差異増幅と高周波応答を含むデバイスの性能の特徴.

主要な成果:

  • 100を超えた高差振幅を達成した.
  • 従来の装置と比較して優れた高周波性能を証明した.
  • 有機半導体のマイノリティキャリア拡散長について洞察を得ました.

結論:

  • 開発された有機双極トランジスタは優れた性能を示しています.
  • 新しいアーキテクチャと素材は 高性能な有機電子機器の道を開きます
  • この進歩により,次世代の電子機器の スイッチングスピードが向上します.