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Updated: Sep 4, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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キュービック・ボロン・アルセニドの高アンビポーラ・モビリティ

Jungwoo Shin1, Geethal Amila Gamage2, Zhiwei Ding1

  • 1Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

Science (New York, N.Y.)
|July 21, 2022
PubMed
まとめ

立方ボロンアルセニド (c-BAs) は超高熱伝導性と高い電子穴の可動性を示し,先進的な電子機器に最適です. 次世代半導体デバイスのこれらの特性を最適化するには,不純物濃度を下げることが重要です.

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