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Complexation Equilibria: Factors Influencing Stability of Complexes01:09

Complexation Equilibria: Factors Influencing Stability of Complexes

451
In complexation reactions, metal cations are the electron pair acceptors, and the ligands are the electron pair donors. The stability of the metal complexes depends primarily on the complexing ability of the central metal ion and the nature of the ligands. Generally, the complexing ability of the metal ion depends on the size and charge of the ion. As the metal ion size increases, the stability of the metal complexes decreases, provided that the valency of the metal ion and the ligands remain...
451
Structure of Amines01:19

Structure of Amines

2.7K
The hybridized nitrogen atom in amines possesses a lone pair of electrons and is bound to three substituents with a bond angle of around 108°, which is less than the tetrahedral angle of 109.5°. However, the C–N–H bond angle is slightly larger at 112°, with a carbon–nitrogen bond length of 147 pm. This carbon–nitrogen bond length of of amines is longer than the carbon–oxygen bond of alcohols (143 pm) but shorter than alkanes’...
2.7K
1° Amines to Diazonium or Aryldiazonium Salts: Diazotization with NaNO2 Overview01:26

1° Amines to Diazonium or Aryldiazonium Salts: Diazotization with NaNO2 Overview

3.4K
Nitrous acid and nitric acids are two types of acids containing nitrogen, among which nitrous acid is weaker than nitric acid. Nitrous acid with a pKa value of 3.37 ionizes in water to give a nitrite ion and the hydronium ion.
The nitrous acid is unstable. Hence, it is formed in situ from a solution of sodium nitrite and cold aqueous acids such as hydrochloric or sulfuric acid. In an acidic solution, the –OH group of nitrous acid undergoes protonation to give oxonium ion, followed by...
3.4K
Noble Gases02:54

Noble Gases

17.8K

The elements in group 18 are noble gases (helium, neon, argon, krypton, xenon, and radon). They earned the name “noble” because they were assumed to be nonreactive since they have filled valence shells. In 1962, Dr. Neil Bartlett at the University of British Columbia proved this assumption to be false.
17.8K
1° Amines to Diazonium or Aryldiazonium Salts: Diazotization with NaNO2 Mechanism01:37

1° Amines to Diazonium or Aryldiazonium Salts: Diazotization with NaNO2 Mechanism

4.0K
Nitrous acid is a relatively weak and unstable acid prepared in situ by the reaction of sodium nitrite and cold, dilute hydrochloric acid. In an acidic solution, the nitrous acid undergoes protonation when it loses water to form a nitrosonium ion—an electrophile. Nitrous acid reacts with primary amines to give diazonium salts. The reaction is called diazotization of primary amines.
4.0K
2° Amines to N-Nitrosamines: Reaction with NaNO201:20

2° Amines to N-Nitrosamines: Reaction with NaNO2

4.5K
Secondary amines react with nitrous acid to form N-nitrosamines, as depicted in Figure 1. Nitrous acid, a weak and unstable acid, is formed in situ from an aqueous solution of sodium nitrite and strong acids, such as hydrochloric acid or sulfuric acid, in cold conditions. In the presence of an acid, the nitrous acid gets protonated. The subsequent loss of water results in the formation of the electrophile known as nitrosonium ion.
4.5K

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関連する実験動画

Updated: Aug 21, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Ga-Nシステムにおける安定した窒素枠組アニオン

Hang Zhai1,2, Rui Xu1, Jianhong Dai2

  • 1State Key Laboratory of Superhard Materials, International Center for Computational Method and Software, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, China.

Journal of the American Chemical Society
|November 17, 2022
PubMed
まとめ

研究者はガリウム-窒素 (Ga-N) 化合物を圧力で探検し,GaN15,GaN10,GaN5のような新しい窒素豊富な物質を発見しました. これらの化合物は,純粋な窒素よりも低い圧力で合成された高エネルギー密度の材料です.

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3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
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関連する実験動画

Last Updated: Aug 21, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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科学分野:

  • 材料科学
  • 固体化学
  • コンピュータ化学

背景:

  • 窒素が豊富な化合物は,多種多様な結合と高エネルギー密度の材料としての潜在性に興味があります.
  • 圧縮されたシステムで新しい組成を探求することは,新しい材料を発見する鍵です.

研究 の 目的:

  • 高圧下での Ga-N システムを調査し,新しい窒素豊富な化合物を特定します.
  • 高エネルギー密度材料としてのこれらの化合物の可能性を評価する.

主な方法:

  • 第一原理 構造的検索 (コンピューティング)
  • 実験的な合成は,レーザーで加熱されたダイヤの細胞を用いた.
  • 熱力学的な安定性分析
  • 分解エネルギー評価

主要な成果:

  • 熱力学的に安定した3つのGa-Nステキオメトリが特定された:GaN15,GaN10,GaN5.
  • これらの化合物は,多用途のポリマー窒素枠組のトポロジーを示しています.
  • GaN10とGaN5の合成圧力は純粋な固体窒素よりも低い.
  • GaN10とGaN5は高エネルギー密度の有望な材料として特定されています.

結論:

  • 新しい窒素に富んだGa-N化合物は,利用可能な圧力で合成できます.
  • エネルギー密度の高い用途に 適しています
  • 極限条件下での窒素豊富な材料と窒素化学の設計を進めている.