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Updated: Aug 6, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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高エントロピーのスピネル酸化物半導体におけるバンドギャップの縮小

Rowan R Katzbaer1, Francisco Marques Dos Santos Vieira2, Ismaila Dabo2

  • 1Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Journal of the American Chemical Society
|March 15, 2023
PubMed
まとめ

高エントロピー酸化物 (HEOs) は,帯域の隙間を狭め,酸素の進化のために触媒的活動を強化します. この研究は, (FeCoNiCuZn) Al2O4で,親酸化物を上回るシネージ効果を明らかにしています.

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