エピタキシアル高Kゲートオキシードと統合された2Dフィンフィールド効果トランジスタ
Congwei Tan1, Mengshi Yu1, Junchuan Tang1
1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Nature
|March 23, 2023
まとめ
研究者は2D半導体フィンと高Kゲート酸化物を用いて新しい3D垂直トランジスタを開発しました. これらのエピタキシアルヘテロ構造は高い性能を達成し,将来の超スケールエレクトロニクスを可能にし,ムーアの法則を拡張します.
科学分野:
- 材料科学
- ナノテクノロジー
- 半導体物理学
背景:
- 2D半導体と高kゲート酸化物を3D垂直アーキテクチャに統合することは,超スケールトランジスタにとって不可欠ですが,大きな課題に直面しています.
- 既存の方法は次の世代のデバイスに必要な 重要な寸法に対する正確な統合と制御を達成するために苦労しています
研究 の 目的:
- 2D半導体フィンと高Kゲート酸化物を用いた新しい3D垂直アーキテクチャの表軸合成を報告する.
- 先進的なトランジスタアプリケーションのためのこれらの構造の製造と特徴を示す.
主な方法:
- 垂直に並べられた2Dフィン酸化物ヘテロ構造のエピタキシアル合成,特にBi2O2Se (2D半導体) とBi2SeO5 (高kゲート酸化物) を統合する.
- 原子的に平らなインターフェイスと1つのユニットセル (1.2 nm) まで超薄なフィン厚さを達成しました.
- 合成ヘテロ構造に基づいた2Dフィンフィールド効果トランジスタ (FinFET) を製造.
主要な成果:
- モノオリエンテッド配列のワファースケール,サイト固有の高密度成長が実証された.
- 270cm2V−1s−1までの高い電子移動率 (μ) を達成した.
- 報告された超低オフ電流 (I_OFF) ~1 pA μm−1,高オン/オフ電流比 (I_ON/I_OFF) は108まで,高オン電流 (I_ON) は830 μA μm−1まで,400 nmのチャンネル長さで.
- 性能指標は,機器とシステムの国際ロードマップ (IRDS) で予測された低電力仕様を満たしています.
結論:
- 開発された2Dのフィン-オキシドのエピタキシアルヘテロ構造は,3Dアーキテクチャの新しいクラスを表しています.
- これらの発見は,超スケールトランジスタの開発を通じてムーアの法則のさらなる拡張のための新しい道を開きます.
- 垂直配列に2D材料と高K介電素を精密に統合することは,将来の電子機器のための実行可能な戦略です.
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