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Updated: Aug 6, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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窒素ドーピングナノグラフェンの集合量子磁力学

Gucheng Zhu1, Yashi Jiang1, Ying Wang2

  • 1Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China.

Journal of the American Chemical Society
|March 23, 2023
PubMed
まとめ

研究者らは,集団量子磁性を示す窒素ドーピングナノグラフェン (N-NGs) を合成した. この突破は,新しい有機スパイントロニックと量子情報装置の開発を可能にします.

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