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Updated: Jul 27, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

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非従来のフェーズWSの可逆半金属半導体移行

Wei Zhai1, Junlei Qi2, Chao Xu3

  • 1Department of Chemistry, City University of Hong Kong, Hong Kong, China.

Journal of the American Chemical Society
|June 6, 2023
PubMed
まとめ

研究者らは,プロトンインターキャレーションにより,トングステンジスルファイド (WS2) の可逆相転換を達成した. このプロセスは,高度な電子機器のための可能性を持つ新しい半導体フェーズを作成します.

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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions

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