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関連する概念動画

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

4.8K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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Ferromagnetism01:31

Ferromagnetism

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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

443
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
443
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

288
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
288
Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

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Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
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Induced Electric Dipoles01:28

Induced Electric Dipoles

4.3K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
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関連する実験動画

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
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ワルツジト製鉄電機における原子スケール偏振スイッチング

Sebastian Calderon1, John Hayden2, Steven M Baksa2

  • 1Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA.

Science (New York, N.Y.)
|June 8, 2023
PubMed
まとめ

フェロ電気ウルトジットはマイクロエレクトロニクスにとって有望ですが,CMOSの互換性のためにより低いスイッチングフィールドが必要です. 原子スケールのイメージングは,ウルトジートリングの平ら化を含む極化逆転メカニズムを明らかにし,材料特性工学の道を開いた.

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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関連する実験動画

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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科学分野:

  • 材料科学
  • 固体物理学
  • ナノテクノロジー

背景:

  • 鉄電器はマイクロエレクトロニクスを統合する可能性を秘めている.
  • 現在の極化スイッチフィールドは,補完性金属酸化物半導体 (CMOS) の互換性を妨げる.

研究 の 目的:

  • 鉄電ウルトジットの原子スケールの極化スイッチングメカニズムを理解し,定量化する.
  • 切替フィールドを減らすための経路を特定する.

主な方法:

  • スキャニング・トランスミッション電子顕微鏡 (STEM) を用いたリアルタイムの原子スケール観測.
  • 逆転エネルギーと中間段階を調査するための第一原理シミュレーション

主要な成果:

  • Al0.94B0.06Nの偏極化逆転モデルが観察され,その中には,ひび割れたウルトジートリングの平ら化が含まれている.
  • 偏振スイッチング中に 臨時非極性幾何学を特定した.
  • シミュレーションで反極相が確認された

結論:

  • この研究は,フェロ電気ウルトジート極化スイッチングの詳細な原子スケールモデルを提供します.
  • このメカニズムの理解は,低スイッチングフィールドを持つフェロ電気ウルトジットの設計に不可欠です.
  • 先進的な電子機器や光学機器のためのこれらの材料の将来の開発を可能にします.