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Updated: Jul 17, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

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骨格イソメリゼーションによるシラ-ダイアモンド型コアへの四次ゲルマニウムセンターの設置

M Imex Aguirre Cardenas1, Timothy C Siu1, Ashley E Pimentel1

  • 1Department of Chemistry, University of California, Riverside, California 92521, United States.

Journal of the American Chemical Society
|September 8, 2023
PubMed
まとめ

研究者はシリコンベースの分子構造に 精密にゲルマニウム原子を加える新しい方法を開発しました このゲルマニウムドーピングは,シラ-ダイアモンド型分子ワイヤの電気伝導性を大幅に高め,先進的な電子部品への道を切り開きます.

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