張力EuVO2Hフィルムにおけるインターサイト電荷移転によって誘発される大きな垂直磁性アニソトロピー
Morito Namba1, Hiroshi Takatsu1, Riho Mikita1
1Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan.
Journal of the American Chemical Society
|September 28, 2023
まとめ
研究者らは,圧力やストレスを加えることで,オキシヒドリドペロブスキートにインターサイト・チャージ・トランスファー (ICT) を誘導した. このアニオンアプローチは,EuVO2Hの鉄磁性および磁性アニソトロピーを強化し,新しい材料の機能性への道を開きます.
科学分野:
- 材料科学
- 固体化学
- 凝縮物質物理学
背景:
- ペロブスキート酸化物 (ABO3) は材料科学において極めて重要であり,インターサイト・チャージ・トランスファー (ICT) は負の熱膨張のようなユニークな現象を誘発する.
- ICTを実現するための現在の方法は,カチオンの置換または順序付けに依存し,新しい機能の範囲を制限しています.
研究 の 目的:
- ペロブスキート材料にICTを誘導するためのアニオンアプローチを実証する.
- EuVO2Hの磁気および伝導特性に対するICTの影響を調査する.
主な方法:
- オキシヒドリドペロブスキートEuVO2Hの合成と特徴付け
- 大量のEuVO2Hに外部圧力を加え,薄膜に圧縮圧力を加える.
- 磁気移行温度 (TC) と磁気アニソトロピーの測定
主要な成果:
- 大量EuVO2Hは10KのTCで鉄磁気隔離性を示す.
- 圧力/ストレスは,EuHからVO2層にICTを誘導し,VO2層を導電性にする.
- ICTはTC (最大4倍) を増加させ,薄膜 (<100 nm) で有意な垂直磁性アニソトロピーを誘導する.
結論:
- EuVO2Hを用いたアニオニック戦略はICTを成功裏に誘導し,カチオニックアプローチの代替案となる.
- 磁気および導電性における観測された変化は,機能的な材料を設計するための新しい道を開きます.
- 変形金属/希土層をヘテロアニオンで交替させることで,新しい材料の機能のための多用途なプラットフォームを提供します.
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