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Updated: Jun 29, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K

MoS2フィールドエフェクトトランジスタのインターフェースを調節するための分子調整戦略

Yu Luo, Huiqiang Lu, Jingwen Huang

    Journal of the American Chemical Society
    |March 28, 2024
    PubMed
    まとめ

    化学的に二次元移行金属二カルコゲン化物 (TMDs) を有機分子で変更することは,結晶の損傷なしに可能である. この新しい協調結合法により,単層のMoS2フィールド効果トランジスタ (FET) の電子特性とデバイス性能が向上します.

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    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

    Published on: August 28, 2018

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