原子限度におけるトウィストアシストの全反鉄磁気トンネル交差点
Yuliang Chen1, Kartik Samanta2,3, Naafis A Shahed2,3
1Max Planck Institute of Microstructure Physics, Halle, Germany.
Nature
|August 14, 2024
まとめ
研究者は2Dアンチフェロマグネットを用いた全反鉄磁気トンネル接合の新型の回転方法を開発しました. この技術は高非揮発性トンネリング磁気抵抗比を達成し,原子限磁気貯蔵装置の道を開く.
科学分野:
- 凝縮物質物理学
- 材料科学
- スピントロニクス
背景:
- 抗鉄磁気スピントロニクスは 高密度で超高速な情報装置の可能性を秘めています
- 磁気トンネル接続 (MTJ) には,反鉄磁性材料がますます使用されています.
研究 の 目的:
- 原子スケールで反鉄磁気トンネルを 作り出すための策略を示します
- 2D反鉄磁性材料のトンネリング磁力抵抗 (TMR) の性質を調査する.
主な方法:
- 2D反鉄磁石 CrSBr の二重層を回転させ,全反鉄磁石トンネル接続を構築する.
- 非揮発性トンネリング磁気抵抗 (TMR) の比率をゼロフィールドで測定する.
- TMRの回転角度と温度による依存性を分析する.
主要な成果:
- 歪んだCrSBrバイレイヤーを用いてゼロフィールドで700%以上の非揮発性TMR比を達成した.
- TMRは,CRSBr単層の間の累積的なコヒーレントトンネリングから発生することを実証した.
- 歪んだ交差点の TMR の温度依存性は,歪まないものと比較して有意に弱いことが観察されました.
結論:
- 歪み戦略により,全反鉄磁気トンネル結合を原子限度で構築できます.
- 歪んだ反鉄磁気トンネルは,高いTMR比と熱安定性を示します.
- このアプローチは,非揮発性磁気情報ストレージを,原子的に薄い限界に向かって進める.
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