Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

Band Theory02:35

Band Theory

15.0K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
15.0K
Types of Semiconductors01:20

Types of Semiconductors

573
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
573
P-N junction01:11

P-N junction

499
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
499
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

319
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
319
Colors and Magnetism03:02

Colors and Magnetism

11.6K
Color in Coordination Complexes
When atoms or molecules absorb light at the proper frequency, their electrons are excited to higher-energy orbitals. For many main group atoms and molecules, the absorbed photons are in the ultraviolet range of the electromagnetic spectrum, which cannot be detected by the human eye. For coordination compounds, the energy difference between the d orbitals often allows photons in the visible range to be absorbed and emitted, which is seen as colors by the human...
11.6K
MOS Capacitor01:25

MOS Capacitor

741
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
741

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

Superconducting coherence boosted by outer-layer metallic screening in multilayered cuprates.

Nature communications·2026
Same author

BCS-BEC crossover driven by small Fermi pockets of a high-T<sub>c</sub> cuprate superconductor.

Nature communications·2026
Same author

Nodeless superconducting gap and electron-boson coupling in (La,Pr,Sm)<sub>3</sub>Ni<sub>2</sub>O<sub>7</sub> films.

Science (New York, N.Y.)·2026
Same author

Superconductivity suppression and bilayer decoupling in Pr-substituted YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-<i>δ</i></sub>.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Fermi-liquid transport beyond the upper critical field in superconducting La<sub>2</sub>PrNi<sub>2</sub>O<sub>7</sub> thin films.

Nature communications·2026
Same author

Discovery of van Hove singularities: electronic fingerprints of 3Q magnetic order in a van der Waals quantum magnet.

Nature communications·2026

関連する実験動画

Updated: Jun 16, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K

電子ドーピングカップレートの異常な正規状態のギャップ

Ke-Jun Xu1,2,3, Junfeng He1,2,4, Su-Di Chen1,2,3,5

  • 1Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.

Science (New York, N.Y.)
|August 15, 2024
PubMed
まとめ

研究者らは,ドーピング不足のクプラートに新しいエネルギーギャップを発見し,クーパーペアリングにより,p型クプラートに匹敵するより高い超伝導的移行温度が可能になることを示唆しています.

さらに関連する動画

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K

関連する実験動画

Last Updated: Jun 16, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K

科学分野:

  • 凝縮物質物理学
  • 材料科学
  • 量子材料について

背景:

  • Nd2-xCexCuO4のようなN型カップレートは複雑な電子的振る舞いを表しています.
  • これらの材料の反鉄磁気順序はフェルミ表面に大きな影響を与える.
  • 超伝導性を進めるためには 正常状態の性質を理解することが重要です

研究 の 目的:

  • 低ドーピングのn型カップレートにおける異常なエネルギーギャップの起源を調査する.
  • このギャップと超伝導性の関係を決定する.
  • n型カップレートにおけるより高い移行温度の可能性を調査する.

主な方法:

  • 角度解像度光放出スペクトル検査 (ARPES) が使用された.
  • 反鉄磁性によるフェルミ表面再構築の分析.
  • 観測されたエネルギーギャップと既知の磁気および超伝導ギャップの比較.

主要な成果:

  • 反鉄磁気ギャップよりもかなり小さい異常なエネルギーギャップが観察されました.
  • このギャップは,ドーピング不足の状況の広い範囲に及ぶ.
  • このギャップは,最適のドーピングで超伝導ギャップにスムーズに接続します.

結論:

  • 低ドーピングのn型カップレートの正常状態のギャップは,おそらくクーパーペアリングから生じる.
  • このギャップの高いエネルギースケールは,高温超伝導の可能性を示唆しています.
  • この発見は,n型カップレートにおけるより高い移行温度を設計するための道を開きます.