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Updated: May 10, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

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ラーマン光譜法,機械学習力場,原子ラーマンテンサを用いた固体イオン導体の点欠陥の急速な特徴化

Willis O'Leary1, Manuel Grumet2, Waldemar Kaiser2

  • 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, United States.

Journal of the American Chemical Society
|September 18, 2024
PubMed
まとめ

固体イオン導体における 点欠陥ラーマンシグネチャーを予測する 効率的な計算方法を開発し 費用を80%削減し デバイス設計における 欠陥の正確な特徴づけを可能にしました

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