Ruddlesden-Popper

Simon Nussbaum1, Demetra Tsokkou2, Aaron T Frei3

  • 1Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, Institute of Chemical Sciences and Engineering (ISIC), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland.

PubMed
まとめ

研究者は,改良された光電子特性のために有機半導体を使用して新しいハイブリッドペロブスキットを開発しました. これらの材料は 効率的な電荷分離を証明し 光を集める高度な装置の 誕生に道を開いています

関連する概念動画

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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